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2SK2998_10 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Chopper Regulator, DC−DC Converter Applications | |||
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2SK2998
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ÏâMOSV)
2SK2998
Chopper Regulator, DCâDC Converter Applications
Unit: mm
z Low drainâsource ON-resistance
: RDS (ON) = 11.5 ⦠(typ.)
z High forward transfer admittance
: |Yfs| = 0.4 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V)
z Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainâsource voltage
Drainâgate voltage (RGS = 20 kâ¦)
Gateâsource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
Tch
Tstg
500
V
500
V
±30
V
0.5
A
1.5
A
0.9
W
150
°C
â55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
TO-92MOD
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
JEITA
TOSHIBA
â
2-5J1C
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Weight: 0.36 g (typ.)
Reliability Handbook (âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
Rth (châa)
138
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2010-04-06
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