2SK2998_06 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter Applications

2SK2998
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2998
Chopper Regulator, DC−DC Converter Applications
z Low drain−source ON resistance : R_{DS (ON)} = 11.5 Ω (typ.)
z High forward transfer admittance : |Y_fs| = 0.4 S (typ.)
z Low leakage current
: I_DSS = 100 μA (max) (V_DS = 500 V)
z Enhancement mode
: V_th = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
500
V
500
V
±30
V
0.5
A
1.5
A
0.9
W
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to
ambient
R_{th (ch−a)}
138
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
TO-92MOD
JEITA
—
TOSHIBA
2-5J1C
Weight: 0.36 g (typ.)
1
2006-11-06