2SK2993_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Chopper Regulator, DC−DC Converter and Motor Drive Applications

2SK2993
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2993
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
z Low drain−source ON resistance
: R_{DS (ON)} = 82 mΩ (typ.)
z High forward transfer admittance
: |Y_fs| = 20 S (typ.)
z Low leakage current : I_DSS = 100 μA (max) (V_DS = 250 V)
z Enhancement mode : V_th = 1.5 to 3.5 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
250
V
250
V
±20
V
20
A
60
100
W
423
mJ
20
A
10
mJ
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may
cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch−c)}
R_{th (ch−a)}
1.25
°C / W
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 1.79 mH, I_AR = 20 A, R_G = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1
2009-09-29