2SK2963_08 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – DC-DC Converter, Relay Drive and Motor Drive Applications

2SK2963
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L²-π-MOS V)
2SK2963
DC-DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
• 4-V gate drive
• Low drain-source ON-resistance: R_{DS (ON)} = 0.5 Ω (typ.)
• High forward transfer admittance: |Y_fs| = 1.2 S (typ.)
• Low leakage current: I_DSS = 100 μA (max) (V_DS = 100 V)
• Enhancement mode: V_th = 0.8 to 2.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Drain power dissipation
(Note 2)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
100
V
100
V
±20
V
1
A
3
0.5
W
1.5
W
137
mJ
1
A
0.05
mJ
150
°C
−55 to 150
°C
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-5K1B
Weight: 0.05 g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic board (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: V_DD = 25 V, T_ch = 25°C (initial), L = 221 mH, R_G = 25 Ω, I_AR = 1 A
Note 4: Repetitive rating: pulse width limited by maximum junction temperature.
Note 5:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and
Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device.
Handle with care.
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
Symbol
R_{th (ch-a)}
Max Unit
250 °C/W
1
2008-03-06