2SK2961_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Relay Drive, Motor Drive and DC−DC Converter Application

2SK2961
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L²âˆ’π−MOSV)
2SK2961
Relay Drive, Motor Drive and DC−DC Converter
Application
Unit: mm
z Low drain−source ON resistance
: R_{DS (ON)} = 0.2 Ω (typ.)
z High forward transfer admittance
: |Y_fs| = 2.0 S (typ.)
z Low leakage current : I_DSS = 100 μA (max) (V_DS = 60 V)
z Enhancement mode : V_th = 0.8 to 2.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
60
V
60
V
±20
V
2.0
A
6.0
0.9
W
150
°C
−55 to 150
°C
JEDEC
TO-92MOD
JEITA
—
TOSHIBA
2-5J1C
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
R_{th (ch−a)}
138
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2009-09-29