2SK2952_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)Chopper Regulator Applications

2SK2952
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2952
Chopper Regulator Applications
z Low drain−source ON resistance
: R_{DS (ON)} = 0.4 Ω (typ.)
z High forward transfer admittance
: |Y_fs| = 8.0 S (typ.)
z Low leakage current : I_DSS = 100 μA (max) (V_DS = 400 V)
z Enhancement mode : V_th = 2.0 to 4.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
400
V
400
V
±30
V
8.5
A
34
A
40
W
427
mJ
8.5
A
4.0
mJ
150
°C
−55 to 150
°C
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch−c)}
R_{th (ch−a)}
3.125
62.5
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C, L = 9.6 mH, R_G = 25 Ω, I_AR = 8.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2009-09-29