2SK2854_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION

2SK2854
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK2854
UHF BAND AMPLIFIER APPLICATION
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.These TOSHIBA
products are neither intended nor warranted for any other use.Do not use
these TOSHIBA products listed in this document except for high frequency
Power Amplifier of telecommunications equipment.
Unit in mm
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
V_DSS
10
V
V_GSS
±6
V
I_D
0.5
A
P_D (Note 1)
0.5
W
T_ch
150
°C
T_stg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
JEDEC
JEITA
TOSHIBA
—
SC−62
2−5K1D
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Tc = 25°C When mounted on a 1.6mm glass epoxy PCB
MARKING
Part No. (or abbreviation code)
UP
Lot No.
123
1. Gate
2. Source
3. Drain
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
1
2007-11-01