2SK2789_06 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

2SK2789
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L²âˆ’π−MOSV)
2SK2789
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance : R_{DS (ON)} = 66 mΩ (typ.)
z High forward transfer admittance : |Y_fs| = 16 S (typ.)
z Low leakage current : I_DSS = 100 μA (max) (V_DS = 100 V)
z Enhancement mode : V_th = 0.8~2.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
100
V
100
V
±20
V
27
A
108
A
60
W
193
mJ
Avalanche current
I_AR
Repetitive avalanche energy (Note 3)
E_AR
Channel temperature
T_ch
Storage temperature range
T_stg
27
A
6
mJ
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within
the absolute maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
R_{th (ch−c)}
R_{th (ch−a)}
Max
Unit
2.08
°C / W
83.3
°C / W
JEDEC
JEITA
TOSHIBA
―
―
2-10S2B
Note 1: Ensure that the channel temperature does not exceed 150°C.
Weight: 1.5 g (typ.)
Note 2: V_DD = 25 V, T_ch = 25°C (initial), L = 428 μH, I_AR = 27 A, R_G = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2006-11-20