2SK2782_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Chopper Regulator, DC-DC Converter and Motor Drive Applications

2SK2782
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L²âˆ’π−MOSV)
2SK2782
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
z 4-V gate drive
z Low drain−source ON-resistance
: R_{DS (ON)} = 0.039 Ω (typ.)
z High forward transfer admittance
: |Y_fs| = 11 S (typ.)
z Low leakage current : I_DSS = 100 μA (max) (V_DS = 60 V)
z Enhancement mode : V_th = 0.8 to 2.0 V (V_DS = 10 V, I_D = 1 mA)
6.8 MAX.
5.2 ± 0.2
Unit: mm
0.6 MAX
0.95 MAX.
0.6 ± 0.15
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
60
V
60
V
±20
V
20
A
50
A
40
W
156
mJ
20
A
4
mJ
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch−c)}
R_{th (ch−a)}
3.125
125
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 25 V, T_ch = 25°C (initial), L = 530 μH, R_G = 25 Ω, I_D = 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
2.3 2.3
0.6 MAX.
123
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
2
1
3
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B5B
Weight: 0.36 g (typ.)
6.8 MAX.
5.2 ± 0.2
0.6 MAX.
0.6 ± 0.15
0.95 MAX.
0.6 ± 0.15
2.3 2.3
123
2.3 2.3
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
0.6 MAX.
2
1
3
JEDEC
―
JEITA
―
TOSHIBA
2-7B7B
Weight: 0.36 g (typ.)
1
2009-12-21