2SK1875_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – N CHANNEL JUNCTION TYPE (HIGH, AM HIGH, AUDIO FREQUENCY AMPLIFIER APPLICATIONS)

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK1875
2SK1875
High Frequency Amplifier Applications
AM High Frequency Amplifier Applications
Audio Frequency Amplifier Applications
Unit: mm
• High |Y_fs|: |Y_fs| = 25 mS (typ.)
• Low C_iss: C_iss = 7.5 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
V_GDS
I_G
P_D
T_j
T_stg
−20
V
10
mA
100
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEDEC
―
JEITA
―
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
TOSHIBA
2-2E1B
Weight: 0.006 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
I_GSS
V_GS = −15 V, V_DS = 0 V
V _{(BR) GDS} V_DS = 0 V, I_G = −100 μA
I_DSS
V_DS = 5 V, V_GS = 0 V
(Note)
V_{GS (OFF)} V_DS = 5 V, I_D = 1 μA
⎪Y_fs⎪
V_DS = 5 V, V_GS = 0 V, f = 1 kHz
C_iss
V_DS = 5 V, V_GS = 0 V, f = 1 MHz
C_rss
V_DG = 5 V, I_D = 0 A, f = 1 MHz
Note: I_DSS classification
GR: 6~12 mA, BL: 10~20 mA, V: 16~32 mA
(G)
(L)
(V)
( ) ...... I_DSS rank marking
Min Typ. Max Unit
⎯
⎯ −1.0 nA
−20 ⎯
⎯
V
6
⎯
32
mA
⎯
⎯
−2.5
V
15
25
⎯
mS
⎯
7.5
10
pF
⎯
2
3
pF
1
2007-11-01