2SK184-GRTPE4 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK184
2SK184
Low Noise Audio Amplifier Applications
Unit: mm
• High |Y_fs|: |Y_fs| = 15 mS (typ.) (V_DS = 10 V, V_GS = 0)
• High breakdown voltage: V_GDS = −50 V
• Low noise: NF = 1.0dB (typ.)
(V_DS = 10 V, I_D = 0.5 mA, f = 1 kHz, R_G = 1 kΩ)
• High input impedance: I_GSS = −1 nA (max) (V_GS = −30 V)
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
V_GDS
−50
V
I_G
10
mA
P_D
200
mW
T_j
125
°C
T_stg
−55~125
°C
JEDEC
―
Note:
Using continuously under heavy loads (e.g. the application of
JEITA
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-4E1C
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.13 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Symbol
Test Condition
I_GSS
V_GS = −30 V, V_DS = 0
V _{(BR) GDS} V_DS = 0, I_G = −100 μA
I_DSS
V_DS = 10 V, V_GS = 0
(Note)
V_{GS (OFF)} V_DS = 10 V, I_D = 0.1 μA
⎪Y_fs⎪
V_DS = 10 V, V_GS = 0, f = 1 kHz
C_iss
V_DS = 10 V, V_GS = 0, f = 1 MHz
C_rss
V_DG = 10 V, I_D = 0, f = 1 MHz
NF (1)
V_DS = 10 V, R_G = 1 kΩ, I_D = 0.5 mA,
f = 10 Hz
NF (2)
V_DS = 10 V, R_G = 1 kΩ, I_D = 0.5 mA,
f = 1 kHz
Note: I_DSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14.0 mA
Min Typ. Max Unit
⎯
⎯ −1.0 nA
−50 ⎯
⎯
V
1.2
⎯ 14.0 mA
−0.2
⎯
−1.5
V
4.0
15
⎯
mS
⎯
13
⎯
pF
⎯
3
⎯
pF
⎯
5
10
dB
⎯
1
2
1
2007-11-01