2SK1771_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – N-CHANNEL MOS TYPE (FM TUNER, VHF RF AMPLIFIER APPLICATIONS)

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
2SK1771
2SK1771
FM Tuner, VHF RF Amplifier Applications
Unit: mm
• Superior inter modulation performance.
• Low noise figure: NF = 1.0dB (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
V_GS
I_D
P_D
T_ch
T_stg
12.5
V
±8
V
30
mA
150
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
―
JEITA
―
TOSHIBA
2-3J1D
Weight: 0.013 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
Test Condition
I_GSS
V _{(BR) DSX}
I_DSS
V_{GS (OFF)}
⎪Y_fs⎪
C_iss
C_rss
G_ps
NF
V_DS = 0, V_GS = ±6 V
V_GS = −4 V, I_D = 100 μA
V_DS = 8 V, V_GS = 0
V_DS = 8 V, I_D = 100 μA
V_DS = 8 V, I_D = 10 mA, f = 1 kHz
V_DS = 8 V, I_D = 10 mA, f = 1 MHz
V_DS = 8 V, I_D = 10 mA, f = 100 MHz
Min Typ. Max Unit
⎯
⎯
±50
nA
12.5 ⎯
⎯
V
0
⎯
0.1 mA
0.5 1.0 1.5
V
⎯
15
20
mS
2.9
3.5
4.1
pF
⎯
0.3
0.8
pF
18
23
28
dB
⎯
1.0
2.2
dB
1
2007-11-01