2SK1739A Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER

2SK1739A
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK1739A
RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER
z Output Power
: Po ≥ 90 W (Min.)
z Drain Efficiency
: η_D = 50% (Typ.)
z Frequency
: f = 770 MHz
z Push−Pull Structure Package
Unit in mm
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Reverse Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
V_DSS
V_GSS
I_D
I_DR
P_D
T_ch
T_stg
80
V
±20
V
11
A
11
A
250
W
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
—
temperature/current/voltage and the significant change in
EIAJ
—
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2−22C2A
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
Weight: 17.5 g
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01