2SK170-V Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Low Noise Audio Amplifier Applications

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK170
2SK170
Low Noise Audio Amplifier Applications
Unit: mm
• Recommended for first stages of EQ and M.C. head amplifiers.
• High |Y_fs|: |Y_fs| = 22 mS (typ.) (V_DS = 10 V, V_GS = 0, I_DSS = 3 mA)
• High breakdown voltage: V_GDS = −40 V
• Low noise: E_n = 0.95 nV/Hz^1/2 (typ.)
(V_DS = 10 V, I_D = 1 mA, f = 1 kHz)
• High input impedance: I_GSS = −1 nA (max) (V_GS = −30 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
V_GDS
I_G
P_D
T_j
T_stg
−40
V
10
mA
400
mW
125
°C
−55~125
°C
JEDEC
TC-92
Note:
Using continuously under heavy loads (e.g. the application of
JEITA
SC-43
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-5F1D
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.21 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Symbol
Test Condition
I_GSS
V_GS = −30 V, V_DS = 0
V _{(BR) GDS} V_DS = 0, I_G = −100 μA
I_DSS
V_DS = 10 V, V_GS = 0
(Note)
V_{GS (OFF)} V_DS = 10 V, I_D = 0.1 μA
⎪Y_fs⎪
V_DS = 10 V, V_GS = 0, f = 1 kHz
C_iss
V_DS = 10 V, V_GS = 0, f = 1 MHz
C_rss
V_DG = 10 V, I_D = 0, f = 1 MHz
NF (1)
V_DS = 10 V, I_D = 1.0 mA, R_G = 1 kΩ,
f = 1 kHz
NF (2)
V_DS = 10 V, I_D = 1.0 mA, R_G = 1 kΩ,
f = 1 kHz
Note: I_DSS classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA
Min Typ. Max Unit
⎯
⎯ −1.0 nA
−40 ⎯
⎯
V
2.6
⎯
20
mA
−0.2
⎯
−1.5
V
⎯
22
⎯
mS
⎯
30
⎯
pF
⎯
6
⎯
pF
⎯
1.0
10
dB
⎯
0.5
2
1
2007-11-01