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2SK170-GR Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Low Noise Audio Amplifier Applications | |||
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK170
2SK170
Low Noise Audio Amplifier Applications
Unit: mm
⢠Recommended for first stages of EQ and M.C. head amplifiers.
⢠High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA)
⢠High breakdown voltage: VGDS = â40 V
⢠Low noise: En = 0.95 nV/Hz1/2 (typ.)
(VDS = 10 V, ID = 1 mA, f = 1 kHz)
⢠High input impedance: IGSS = â1 nA (max) (VGS = â30 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDS
IG
PD
Tj
Tstg
â40
V
10
mA
400
mW
125
°C
â55~125
°C
JEDEC
TC-92
Note:
Using continuously under heavy loads (e.g. the application of
JEITA
SC-43
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-5F1D
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.21 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Symbol
Test Condition
IGSS
VGS = â30 V, VDS = 0
V (BR) GDS VDS = 0, IG = â100 μA
IDSS
VDS = 10 V, VGS = 0
(Note)
VGS (OFF) VDS = 10 V, ID = 0.1 μA
âªYfsâª
VDS = 10 V, VGS = 0, f = 1 kHz
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
Crss
VDG = 10 V, ID = 0, f = 1 MHz
NF (1)
VDS = 10 V, ID = 1.0 mA, RG = 1 kΩ,
f = 1 kHz
NF (2)
VDS = 10 V, ID = 1.0 mA, RG = 1 kΩ,
f = 1 kHz
Note: IDSS classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA
Min Typ. Max Unit
â¯
⯠â1.0 nA
â40 â¯
â¯
V
2.6
â¯
20
mA
â0.2
â¯
â1.5
V
â¯
22
â¯
mS
â¯
30
â¯
pF
â¯
6
â¯
pF
â¯
1.0
10
dB
â¯
0.5
2
1
2007-11-01
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