2SK1530_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1530
2SK1530
High-Power Amplifier Application
z High breakdown voltage
z High forward transfer admittance
z Complementary to 2SJ201
: V_DSS = 200V
: |Y_fs| = 5.0 S (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Gate−source voltage
Drain current
(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
V_DSS
V_GSS
I_D
P_D
T_c
T_stg
200
V
±20
V
12
A
150
W
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Marking
JEDEC
―
JEITA
―
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
TOSHIBA
2SK1530
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Drain cut−off current
Gate leakage current
Drain−source breakdown voltage
Drain−source saturation voltage
Gate−source cut−off voltage (Note 2)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
I_DSS
I_GSS
V _{(BR) DSS}
V_{DS (ON)}
V_{GS (OFF)}
|Y_fs|
C_iss
C_oss
C_rss
V_DS = 200 V, V_GS = 0
V_DS = 0V, V_GS = ±20 V
I_D = 10 mA, V_GS = 0
I_D = 8 A, V_GS = 10 V
V_DS = 10 V, I_D = 0.1 A
V_DS = 10 V, I_D = 5 A
V_DS = 30 V, V_GS = 0, f = 1 MHz
V_DS = 30 V, V_GS = 0, f = 1 MHz
V_DD = 30 V, V_GS = 0, f = 1 MHz
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_{GS (OFF)} Classification
0: 0.8~1.6 Y: 1.4~2.8
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
Min Typ. Max Unit
—
—
1.0 mA
—
— ±0.5 μA
200
—
—
V
—
2.5 5.0
V
0.8
—
2.8
V
—
5.0
—
S
— 900 —
— 180 —
pF
— 100 —
2006-11-20