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2SK1530Y Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High-Power Amplifier Application | |||
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1530
2SK1530
High-Power Amplifier Application
z High breakdown voltage
z High forward transfer admittance
z Complementary to 2SJ201
: VDSS = 200 V
: |Yfs| = 5.0 S (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainâsource voltage
Gateâsource voltage
Drain current
(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
PD
Tch
Tstg
200
V
±20
V
12
A
150
W
150
°C
â55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150°C.
JEDEC
â
JEITA
â
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
Marking
Note 2: A line under a Lot No. identifies the indication of product
TOSHIBA
2SK1530
Part No. (or abbreviation code)
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Lot No.
Please contact your TOSHIBA sales representative for details as to
JAPAN
Note 2
environmental matters such as the RoHS compatibility of Product. The
RoHS is the Directive 2002/95/EC of the European Parliament and of
the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Drain cutâoff current
Gate leakage current
Drainâsource breakdown voltage
Drainâsource saturation voltage
Gateâsource cutâoff voltage (Note 3)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
IDSS
IGSS
V (BR) DSS
VDS (ON)
VGS (OFF)
|Yfs|
Ciss
Coss
Crss
VDS = 200 V, VGS = 0
VDS = 0V, VGS = ±20 V
ID = 10 mA, VGS = 0
ID = 8 A, VGS = 10 V
VDS = 10 V, ID = 0.1 A
VDS = 10 V, ID = 5 A
VDS = 30 V, VGS = 0, f = 1 MHz
VDS = 30 V, VGS = 0, f = 1 MHz
VDS = 30 V, VGS = 0, f = 1 MHz
Note 3: VGS (OFF) Classification
0: 0.8 to 1.6 Y: 1.4 to 2.8
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
Min Typ. Max Unit
â
â
1.0 mA
â
â ±0.5 μA
200
â
â
V
â
2.5 5.0
V
0.8
â
2.8
V
â
5.0
â
S
â 900 â
â 180 â
pF
â 100 â
2009-12-21
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