2SK1529_09 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High-Power Amplifier Application

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1529
2SK1529
High-Power Amplifier Application
z High breakdown voltage
z High forward transfer admittance
z Complementary to 2SJ200
: V_DSS = 180 V
: |Y_fs| = 4.0 S (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Gate−source voltage
Drain current
(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
V_DSS
V_GSS
I_D
P_D
T_ch
T_stg
180
V
±20
V
10
A
120
W
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150°C.
Marking
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
K1529
Part No. (or abbreviation code)
Lot No.
Note 2
Note 2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product. The RoHS
is the Directive 2002/95/EC of the European Parliament and of the Council of
27 January 2003 on the restriction of the use of certain hazardous substances
in electrical and electronic equipment.
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Drain cut−off current
Gate leakage current
Drain−source breakdown voltage
Drain−source saturation voltage
Gate−source cut−off voltage (Note 3)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
I_DSS
I_GSS
V _{(BR) DSS}
V_{DS (ON)}
V_{GS (OFF)}
|Y_fs|
C_iss
C_oss
C_rss
V_DS = 180 V, V_GS = 0
V_DS = 0, V_GS = ±20 V
I_D = 10 mA, V_GS = 0
I_D = 6 A, V_GS = 10 V
V_DS = 10 V, I_D = 0.1 A
V_DS = 10 V, I_D = 3 A
V_DS = 30 V, V_GS = 0, f = 1 MHz
V_DS = 30 V, V_GS = 0, f = 1 MHz
V_DS = 30 V, V_GS = 0, f = 1 MHz
Note 3: V_{GS (OFF)} Classification
0: 0.8 to 1.6 Y: 1.4 to 2.8
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
Min Typ. Max Unit
—
—
1.0 mA
—
— ±0.5 μA
180
—
—
V
—
2.5 5.0
V
0.8
—
2.8
V
—
4.0
—
S
— 700 —
— 150 —
pF
—
90
—
2009-12-21