2SK1359 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

2SK1359
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII^.5)
2SK1359
DC−DC Converter and Motor Drive Applications
Unit: mmç
Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.)
High forward transfer admittance : |Yfs| = 2.0 S (typ.)
Low leakage current : IDSS = 300 µA (max) (VDS = 800 V)
Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
R_{th (ch−c)}
R_{th (ch−a)}
1000
V
1000
V
±30
V
5
A
15
125
W
150
°C
−55~150
°C
Max
Unit
1.0
°C / W
50
°C / W
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2002-09-04