2SK1062_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type High Speed Switching Applications

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1062
High Speed Switching Applications
Analog Switching Applications
Interface Applications
2SK1062
Unit: mm
• Excellent switching time: t_on = 14 ns (typ.)
• High forward transfer admittance: |Y_fs| = 100 ms (min)
@I_D = 50 mA
• Low on resistance: R_{DS (ON)} = 0.6 Ω (typ.) @ I_D = 50 mA
• Enhancement-mode
• Complementary to 2SJ168
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
V_DS
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
60
V
±20
V
200
mA
800
200
mW
150
°C
−55~150
°C
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01