2SJ74_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Low Noise Audio Amplifier Applications

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ74
2SJ74
Low Noise Audio Amplifier Applications
Unit: mm
• Recommended for first stages of EQ amplifiers and M.C. head
amplifiers.
• High |Y_fs|: |Y_fs| = 22 mS (typ.)
(V_DS = −10 V, V_GS = 0, I_DSS = −3 mA)
• Low noise: E_n = 0.95 nV/Hz^1/2 (typ.)
(V_DS = −10 V, I_D = −1 mA, f = 1 kHz)
• High input impedance: I_GSS = 1.0 nA (max) (V_GS = 25 V)
• Complimentary to 2SK170
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
V_GDS
I_G
P_D
T_j
T_stg
25
V
−10
mA
400
mW
125
°C
−55~125
°C
JEDEC
JEITA
TO-92
SC-43
Note:
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-5F1D
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.21 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
I_GSS
V _{(BR) GDS}
V_GS = 25 V, V_DS = 0
V_DS = 0, I_G = 100 μA
I_DSS
V_DS = −10 V, V_GS = 0
(Note)
V_{GS (OFF)} V_DS = −10 V, I_D = −0.1 μA
⎪Y_fs⎪
V_DS = −10 V, V_GS = 0, f = 1 kHz
C_iss
V_DS = −10 V, V_GS = 0, f = 1 MHz
C_rss
NF (1)
V_DG = −10 V, I_D = 0, f = 1 MHz
V_DS = −10 V, I_D = −1 mA, R_G = 1 kΩ,
f = 10 Hz
NG (2)
V_DS = −10 V, I_D = −1 mA, R_G = 1 kΩ,
f = 1 kHz
Note: I_DSS classification GR: −2.6~−6.5 mA, BL: −6.0~−12 mA, V: −10~−20 mA
Min Typ. Max Unit
⎯
⎯
1.0
nA
25
⎯
⎯
V
−2.6
⎯
−20 mA
0.15 ⎯
2.0
V
8
22
⎯
mS
⎯ 105 ⎯
pF
⎯
32
⎯
pF
⎯
1.0
10
dB
⎯
0.5
2
1
2007-11-01