2SJ74 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – P CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ74
2SJ74
Low Noise Audio Amplifier Applications
Unit: mm
· Recommended for first stages of EQ amplifiers and M.C. head
amplifiers.
· High |Yfs|: |Yfs| = 22 mS (typ.)
(VDS = −10 V, VGS = 0, IDSS = −3 mA)
· Low noise: En = 0.95 nV/Hz^1/2 (typ.)
(VDS = −10 V, ID = −1 mA, f = 1 kHz)
· High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
· Complimentary to 2SK170
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
V_GDS
I_G
P_D
T_j
T_stg
Rating
Unit
25
V
-10
mA
400
mW
125
°C
-55~125
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1D
Weight: 0.21 g (typ.)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
I_GSS
V_GS = 25 V, V_DS = 0
V _{(BR) GDS} V_DS = 0, I_G = 100 mA
I_DSS
V_DS = -10 V, V_GS = 0
(Note)
V_{GS (OFF)}
ïY_fsï
V_DS = -10 V, I_D = -0.1 mA
V_DS = -10 V, V_GS = 0, f = 1 kHz
C_iss
V_DS = -10 V, V_GS = 0, f = 1 MHz
C_rss
NF (1)
V_DG = -10 V, I_D = 0, f = 1 MHz
V_DS = -10 V, I_D = -1 mA, R_G = 1 kW,
f = 10 Hz
NG (2)
V_DS = -10 V, I_D = -1 mA, R_G = 1 kW,
f = 1 kHz
Note: I_DSS classification GR: -2.6~-6.5 mA, BL: -6.0~-12 mA, V: -10~-20 mA
Min Typ. Max Unit
¾
¾
1.0
nA
25
¾
¾
V
-2.6 ¾ -20 mA
0.15 ¾
2.0
V
8
22
¾
mS
¾ 105 ¾
pF
¾
32
¾
pF
¾
1.0
10
dB
¾
0.5
2
1
2003-03-25