2SJ680_06 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon P-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications

2SJ680
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOS V)
2SJ680
Switching Applications
Chopper Regulator, DC/DC Converter and
Motor Drive Applications
６．５±０．２
５．２±０．２
Unit: mm
０．６ MAX．
• Low drain-source ON-resistance: R_{DS (ON)} = 1.6 Ω (typ.)
• High forward transfer admittance: |Y_fs| = 2.0 S (typ.)
• Low leakage current: I_DSS = −100 μA (max) (V_DS = −200 V)
• Enhancement model: V_th = −1.5 ~ −3.5 V (V_DS = −10 V, I_D = −1 mA)
０．９
２．３ ２．３
１．１±０．２
０．６ MAX
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
１２３
０．８ MAX．
１．1 MAX．
０．６±０．１５
０．６±０．１５
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
−200
V
−200
V
±20
V
−2.5
A
−10
20
W
97.5
mJ
−2.5
A
2.0
mJ
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch-c)}
R_{th (ch-a)}
6.25
°C/W
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = −50 V, Tch = 25°C (initial), L = −25.2 mH, I_AR = −2.5 A, R_G = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-17