2SJ676_09 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Switching Regulator, DC/DC Converter and

2SJ676
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π−MOS V)
2SJ676
Switching Regulator, DC/DC Converter and
Motor Drive Applications
Unit: mm
z Low drain-source ON-resistance: R_{DS (ON)} = 1.6 Ω (typ.)
z High forward transfer admittance: |Y_fs| = 2.0 S (typ.)
z Low leakage current: I_DSS = −100 μA (max) (V_DS = −200 V)
z Enhancement mode: V_th = −1.5 to −3.5 V (V_DS = −10 V, I_D = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
−200
V
−200
V
±20
V
−2.5
A
−10
A
1.3
W
191
mJ
−2.5
A
0.13
mJ
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8M1B
Weight: 0.54 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to ambient
R_{th (ch−a)}
96.1
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = −50 V, T_ch = 25°C (initial), L = 48.6 mH, R_G = 25 Ω, I_AR = −2.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29