2SJ669_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Relay Drive, DC/DC Converter and Motor Drive

2SJ669
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOS III)
2SJ669
Relay Drive, DC/DC Converter and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drain-source ON-resistance: R_{DS (ON)} = 0.12 Ω (typ.)
z High forward transfer admittance: |Y_fs| = 5.0 S (typ.)
z Low leakage current: I_DSS = −100 μA (max) (V_DS = −60 V)
z Enhancement mode: V_th = −0.8 to −2.0 V
(V_DS = −10 V, I_D = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
I_D
Drain current
I_DP
Drain power dissipation
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
−60
V
−60
V
±20
V
−5
A
−20
A
1.2
W
40.5
mJ
−5
A
0.12
mJ
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8M1B
Weight: 0.54 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to ambient
R_{th (ch−a)}
104
°C / W
Note 1: The channel temperature should not exceed 150℃ during use.
Note 2: V_DD = −25 V, T_ch = 25°C (initial), L = 2.2 mH, R_G = 25 Ω, I_AR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29