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2SJ620_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator and DC-DC Converter Applications Motor Drive Applications | |||
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2SJ620
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-Ï-MOSV)
2SJ620
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
Unit: mm
⢠4-V gate drive
⢠Low drain-source ON resistance: RDS (ON) = 63 m⦠(typ.)
⢠High forward transfer admittance: |Yfs| = 15 S (typ.)
⢠Low leakage current: IDSS = â100 μA (max) (VDS = â100 V)
⢠Enhancement mode: Vth = â0.8 to â2.0 V (VDS = â10 V, ID = â1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
â100
V
â100
V
±20
V
â18
A
â72
125
W
937
mJ
â18
A
12.5
mJ
150
°C
â55 to 150
°C
JEDEC
â
JEITA
â
TOSHIBA
2-9F1C
Weight: 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (âHandling Precautionsâ/âDerating Concept and
Methodsâ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Circuit Configuration
4
Thermal resistance, channel to case
Rth (ch-c)
1.0
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = â50 V, Tch = 25°C (initial), L = 3.56 mH, RG = 25 Ω, IAR = â18 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
3
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29
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