2SJ619 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2MOSV)

2SJ619
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L²-F-MOSV)
2SJ619
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
Unit: mm
· 4-V gate drive
· Low drain-source ON resistance: RDS (ON) = 0.15 W (typ.)
· High forward transfer admittance: ïYfsï = 7.7 S (typ.)
· Low leakage current: IDSS = -100 µA (max) (VDS = -100 V)
· Enhancement-model: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Thermal Characteristics
Rating
Unit
-100
V
-100
V
±20
V
-16
A
-64
75
W
292
mJ
-16
A
7.5
mJ
150
°C
-55 to150
°C
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
4
Characteristics
Symbol
Max
Unit
1
Thermal resistance, channel to case
R_{th (ch-c)}
1.67
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
3
Note 2: V_DD = -25 V, T_ch = 25°C (initial), L = 1.84 mH, R_G = 25 W,
I_AR = -16 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-08-09