2SJ618 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Power Amplifier Applications

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSⅤ)
2SJ618
2SJ618
High-Power Amplifier Applications
• High breakdown voltage: V_DSS = −180 V
• Complementary to 2SK3497
15.9 MAX.
Unit: mm
Ф3.2 ± 0.2
Absolute Maximum Ratings (Ta = 25°C)
2.0 ± 0.3
1.0
＋0.3
－0.25
5.45 ± 0.2
5.45 ± 0.2
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
V_DSS
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
−180
V
±20
V
−10
A
−30
A
130
W
150
°C
−55 to 150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C.
123
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
⎯
JEITA
SC-67
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch−c)}
0.96
°C / W
2
Thermal resistance, channel to ambient
R_{th (ch−a)}
50
°C / W
1
3
1
2009-09-29