2SJ610_06 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon P-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications

2SJ610
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)
2SJ610
Switching Regulator, DC/DC Converter and
Motor Drive Applications
• Low drain-source ON-resistance: R_{DS (ON)} = 1.85 Ω (typ.)
• High forward transfer admittance: |Y_fs| = 18 S (typ.)
• Low leakage current: I_DSS = −100 μA (V_DS = −250 V)
• Enhancement mode: V_th = −1.5~−3.5 V (V_DS = 10 V, I_D = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
−250
V
−250
V
±20
V
−2.0
A
−4.0
20
W
180
mJ
−2.0
A
2.0
mJ
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch-c)}
6.25
°C/W
JEDEC
―
Thermal resistance, channel to ambient
R_{th (ch-a)}
125
°C/W
JEITA
―
Note 1: Ensure that the channel temperature does not exceed 150°C.
TOSHIBA
2-7J1B
Note 2: V_DD = −50 V, T_ch = 25°C (initial), L = 75 mH, I_AR = −2.0 A,
R_G = 25 Ω
Weight: 0.36 g (typ.)
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-16