2SJ567_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)

2SJ567
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)
2SJ567
Switching Applications
Chopper Regulator, DC/DC Converter and
Motor Drive Applications
• Low drain-source ON-resistance: R_{DS (ON)} = 1.6 Ω (typ.)
• High forward transfer admittance: |Y_fs| = 2.0 S (typ.)
• Low leakage current: I_DSS = −100 μA (max) (V_DS = −200 V)
• Enhancement model: V_th = −1.5 to −3.5 V (V_DS = −10 V, I_D = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
−200
V
−200
V
±20
V
−2.5
A
−10
20
W
97.5
mJ
Avalanche current
I_AR
Repetitive avalanche energy (Note 3)
E_AR
Channel temperature
T_ch
Storage temperature range
T_stg
−2.5
A
2.0
mJ
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch-c)}
R_{th (ch-a)}
6.25
°C/W
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = −50 V, Tch = 25°C (initial), L = −25.2 mH, I_AR = −2.5 A
R_G = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
6.8 MAX.
5.2 ± 0.2
Unit: mm
0.6 MAX.
0.95 MAX.
0.6 ± 0.15
2.3 2.3
123
0.6 MAX.
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
JEDEC
2
1
3
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
6.5 ± 0.2
5.2 ± 0.2
0.6 MAX.
0.8 MAX.
0.6 ± 0.15
1
1.05 MAX.
23
1.1 ± 0.2
0.6 MAX.
2.3 ± 0.15 2.3 ± 0.15
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
2
1
3
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
2009-07-13