2SJ537 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Chopper Regulator, DC−DC Converter and Motor Drive Applications

2SJ537
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L²âˆ’π−MOSVI)
2SJ537
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.)
High forward transfer admittance : |Yfs| = 3.5 S (typ.)
Low leakage current : IDSS = −100 µA (VDS = −50 V)
Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
Thermal Characteristics
Characteristics
Thermal resistance, channel to
ambient
Symbol
R_{th (ch−a)}
−50
V
−50
V
±20
V
−5
A
−15
A
0.9
W
150
°C
−55~150
°C
Max
Unit
138
°C / W
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1C
Weight: 0.36 g (typ.)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2004-09-01