2SJ509_09 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Chopper Regulator, DC−DC Converter and Motor Drive

2SJ509
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L²âˆ’π−MOSV)
2SJ509
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance
: R_{DS (ON)} = 1.35 Ω (typ.)
z High forward transfer admittance : |Y_fs| = 0.7 S (typ.)
z Low leakage current : I_DSS = −100 μA (max) (V_DS = −100 V)
z Enhancement mode : V_th = −0.8 to −2.0 V (V_DS = −10 V, I_D = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Ta = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
−100
V
−100
V
±20
V
−1
A
−3
A
0.9
W
136.5
mJ
−1
A
0.09
mJ
150
°C
−55 to 150
°C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1C
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to
ambient
R_{th (ch−a)}
138
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = −50 V, T_ch = 25°C (initial), L = 168 mH, R_G = 25 Ω, I_AR = −1 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2009-09-29