2SJ465_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – DC−DC Converter, Relay Drive and Motor Drive Applications

2SJ465
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L²âˆ’π−MOSV)
2SJ465
DC−DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
z 2.5-V gate drive
z Low drain−source ON resistance : R_{DS (ON)} = 0.54 Ω (typ.)
z High forward transfer admittance : |Y_fs| = 1.7 S (typ.)
z Low leakage current : I_DSS = −100 μA (max) (V_DS = −16 V)
z Enhancement mode : V_th = −0.5~−1.1 V (V_DS = −10 V, I_D = −200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Drain power dissipation
(Note 2)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
T_ch
T_stg
−16
V
−16
V
±8
V
−2
A
−6
0.5
W
1.5
W
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2−5K1B
Weight: 0.05 g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Thermal resistance, channel to
ambient
R_{th (ch−a)}
250
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit
°C / W
1
2006-11-15