2SJ440_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Audio Frequency Power Amplifier Application

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ440
Audio Frequency Power Amplifier Application
• High breakdown voltage: V_DSS = −180 V
• High forward transfer admittance: |Y_fs| = 4.0 S (typ.)
2SJ440
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
(Note 1)
Power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
V_DSS
V_GSS
I_D
P_D
T_ch
T_stg
−180
V
±20
V
−9
A
80
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2006-11-16