2SJ439_10 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – DC/DC Converter, Relay Drive and Motor Drive Applications

2SJ439
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π−MOSV)
2SJ439
DC/DC Converter, Relay Drive and Motor Drive
Applications
z 2.5-V gate drive
z Low drain-source ON-resistance
: R_{DS (ON)} = 0.18 Ω (typ.)
z High forward transfer admittance
: |Y_fs| = 6.0 S (typ.)
z Low leakage current : I_DSS = −100 μA (max) (V_DS = −16 V)
z Enhancement mode : V_th = −0.5 to −1.1 V (V_DS = −10 V, I_D = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
6.5 ± 0.2
5.2 ± 0.2
Unit: mm
0.6 MAX.
0.8 MAX.
0.6 ± 0.15
1
1.05 MAX.
23
1.1 ± 0.2
0.6 MAX.
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
−16
V
−16
V
±8
V
−5
A
−20
20
W
150
°C
−55 to 150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C.
2.3 ± 0.15 2.3 ± 0.15
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
2
1
3
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch−c)}
R_{th (ch−a)}
6.25
°C / W
125
°C / W
This transistor is an electrostatic-sensitive device. Handle with care.
1
2010-02-05