2SJ412_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – DC-DC Converter, Relay Drive and Motor Drive Applications

2SJ412
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L²-π-MOSV)
2SJ412
DC-DC Converter, Relay Drive and Motor Drive
Applications
• 4-V gate drive
• Low drain-source ON resistance: R_{DS (ON)} = 0.15 Ω (typ.)
• High forward transfer admittance: |Y_fs| = 7.7 S (typ.)
• Low leakage current: I_DSS = −100 μA (max) (V_DS = −100 V)
• Enhancement mode: V_th = −0.8 to −2.0 V (V_DS = −10 V, I_D = −1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
−100
V
−100
V
±20
V
−16
A
−64
60
W
292
mJ
−16
A
6
mJ
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics
JEDEC
―
Symbol
Max
Unit
JEITA
―
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch-c)}
R_{th (ch-a)}
2.08
83.3
°C/W
°C/W
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = −25 V, T_ch = 25°C (initial), L = 1.84 mH, R_G = 25 Ω, I_AR = −16 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2009-09-29