2SJ402_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – DC−DC Converter, Relay Drive and Motor Drive Applications

2SJ402
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L²âˆ’π−MOSV)
2SJ402
DC−DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance
: R_{DS (ON)} = 29 mΩ (typ.)
z High forward transfer admittance
: |Y_fs| = 23 S (typ.)
z Low leakage current : I_DSS = −100 μA (max) (V_DS = −60 V)
z Enhancement mode : V_th = −0.8 to −2.0 V (V_DS = −10 V, I_D = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
−60
V
−60
V
±20
V
−30
A
−120
A
100
W
936
mJ
Avalanche current
I_AR
Repetitive avalenche energy (Note 3)
E_AR
Channel temperature
T_ch
Storage temperature range
T_stg
−30
A
10
mJ
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch−c)}
R_{th (ch−a)}
1.25
°C / W
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = −50 V, T_ch = 25°C (initial), L = 747 μH, R_G = 25 Ω,
I_AR = −30 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1
2009-09-29