2SJ377_05 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Relay Drive, DC/DC Converter and Motor Drive Applications

2SJ377
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L²âˆ’π−MOSV)
2SJ377
Relay Drive, DC/DC Converter and Motor Drive
Applications
Unit: mm
4 V gate drive
Low drain−source ON-resistance
: R_{DS (ON)} = 0.16 Ω (typ.)
High forward transfer admittance
: |Y_fs| = 4.0 S (typ.)
Low leakage current : I_DSS = −100 µA (max) (V_DS = −60 V)
Enhancement mode : V_th = −0.8~−2.0 V (V_DS = −10 V, I_D = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
−60
V
−60
V
±20
V
−5
A
−20
A
20
W
273
mJ
−5
A
2
mJ
150
°C
−55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
R_{th (ch−c)}
R_{th (ch−a)}
6.25
°C / W
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = −25 V, T_ch = 25°C (initial), L = 14.84 mH,
R_G = 25 Ω, I_AR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
2005-03-04