2SJ377Q Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Relay Drive, DC/DC Converter and Motor Drive Applications

2SJ377
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L²âˆ’π−MOSV)
2SJ377
Relay Drive, DC/DC Converter and Motor Drive
Applications
z 4 V gate drive
z Low drain-source ON-resistance
: R_{DS (ON)} = 0.16 Ω (typ.)
z High forward transfer admittance
: |Y_fs| = 4.0 S (typ.)
z Low leakage current : I_DSS = −100 μA (max) (V_DS = −60 V)
z Enhancement mode : V_th = −0.8 to −2.0 V (V_DS = −10 V, I_D = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
6.5 ± 0.2
5.2 ± 0.2
Unit: mm
0.6 MAX.
0.8 MAX.
0.6 ± 0.15
1
1.05 MAX.
23
1.1 ± 0.2
0.6 MAX.
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
−60
V
−60
V
±20
V
−5
A
−20
A
20
W
273
mJ
−5
A
2
mJ
150
°C
−55 to 150
°C
2.3 ± 0.15 2.3 ± 0.15
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
2
1
3
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch−c)}
6.25
°C / W
Thermal resistance, channel to ambient
R_{th (ch−a)}
125
°C / W
Note 1:
Note 2:
Note 3:
Ensure that the channel temperature does not exceed 150°C.
V_DD = −25 V, T_ch = 25°C (initial), L = 14.84 mH, R_G = 25 Ω,
I_AR = −5 A
Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2010-02-05