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2SJ360_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Chopper Regulator, DC−DC Converter and Motor Drive Applications | |||
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2SJ360
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2âÏâMOSV)
2SJ360
High Speed, High current Switching Applications
Chopper Regulator, DCâDC Converter and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drainâsource ON resistance
: RDS (ON) = 0.55 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 0.9 S (typ.)
z Low leakage current : IDSS = â100 μA (max) (VDS = â60 V)
z Enhancement mode : Vth = â0.8 to â2.0 V (VDS = â10 V, ID = â1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainâsource voltage
VDSS
â60
V
Drainâgate voltage (RGS = 20 k Ω)
VDGR
â60
V
Gateâsource voltage
VGSS
±20
V
Drain current
DC (Note 1)
ID
Pulse (Note 1)
IDP
â1
A
â4
A
Drain power dissipation
PD
0.5
W
JEDEC
â¯
Drain power dissipation
(Note 2)
PD
1.5
W
JEITA
SC-62
Channel temperature
Storage temperature range
Tch
150
°C
Tstg
â55 to 150
°C
TOSHIBA
2â5K1B
Weight: 0.05 g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm à 25.4 mm à 0.8 mm)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to
ambient
Rth (châa)
250
°C / W
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2009-09-29
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