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2SJ360_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Chopper Regulator, DC−DC Converter and Motor Drive Applications | |||
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2SJ360
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2âÏâMOSV)
2SJ360
Chopper Regulator, DCâDC Converter and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drainâsource ON resistance : RDS (ON) = 0.55 ⦠(typ.)
z High forward transfer admittance : |Yfs| = 0.9 S (typ.)
z Low leakage current : IDSS = â100 μA (max) (VDS = â60 V)
z Enhancement mode : Vth = â0.8~â2.0 V (VDS = â10 V, ID = â1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainâsource voltage
Drainâgate voltage (RGS = 20 kâ¦)
Gateâsource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Drain power dissipation
(Note 2)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
Tch
Tstg
â60
V
â60
V
±20
V
â1
A
â3
A
0.5
W
1.5
W
150
°C
â55~150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C.
JEDEC
â
JEITA
SCâ62
TOSHIBA
2â5K1B
Weight: 0.05 g (typ.)
Note 2: Mounted on a ceramic substrate (25.4 mm à 25.4 mm à 0.8 mm)
Note 3:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (âHandling Precautionsâ/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Thermal resistance, channel to
ambient
Rth (châa)
250
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit
°C / W
1
2006-11-15
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