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2SJ344_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications | |||
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ344
High Speed Switching Applications
Analog Switch Applications
⢠Low threshold voltage: Vth = â0.8~â2.5 V
⢠High speed
⢠Enhancement-mode
⢠Small package
⢠Complementary to 2SK1827
Marking
Equivalent Circuit
2SJ344
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
VDS
VGSS
ID
PD
Tch
Tstg
â50
V
â7
V
â50
mA
100
mW
150
°C
â55~150
°C
JEDEC
â
JEITA
SC-70
TOSHIBA
2-2E1E
Weight: 0.006 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshould voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
IGSS
V (BR) DSS
IDSS
Vth
âªYfsâª
RDS (ON)
Ciss
Crss
Coss
ton
toff
Test Condition
VGS = â7 V, VDS = 0
ID = â100 μA, VGS = 0
VDS = â50 V, VGS = 0
VDS = â5 V, ID = â0.1 mA
VDS = â5 V, ID = â10 mA
ID = â10 mA, VGS = â4 V
VDS = â5 V, VGS = 0, f = 1 MHz
VDS = â5 V, VGS = 0, f = 1 MHz
VDS = â5 V, VGS = 0, f = 1 MHz
VDD = â5 V, ID = â10 mA,
VGS = 0~â4 V
1
Min Typ. Max Unit
â¯
â¯
â1
μA
â50 â¯
â¯
V
â¯
â¯
â1
μA
â0.8
â¯
â2.5
V
15
â¯
â¯
mS
â¯
20
50
Ω
⯠10.5 â¯
pF
â¯
1.9
â¯
pF
â¯
7.2
â¯
pF
⯠0.15 â¯
μs
⯠0.13 â¯
2007-11-01
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