2SJ342_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching, Analog Switch Applications

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ342
High Speed Switching Applications
Analog Switch Applications
• Low threshold voltage: V_th = −0.8~−2.5 V
• High speed
• Enhancement-mode
• Small package
• Complementary to 2SK1825
Equivalent Circuit
2SJ342
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
V_DS
V_GSS
I_D
P_D
T_ch
T_stg
−50
V
−7
V
−50
mA
300
mW
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-4E1E
Weight: 0.13 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshould voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
I_GSS
V _{(BR) DSS}
I_DSS
V_th
⎪Y_fs⎪
R_{DS (ON)}
C_iss
C_rss
C_oss
t_on
t_off
V_GS = −7 V, V_DS = 0
I_D = −100 μA, V_GS = 0
V_DS = −50 V, V_GS = 0
V_DS = −5 V, I_D = −0.1 mA
V_DS = −5 V, I_D = −10 mA
I_D = −10 mA, V_GS = −4 V
V_DS = −5 V, V_GS = 0, f = 1 MHz
V_DS = −5 V, V_GS = 0, f = 1 MHz
V_DS = −5 V, V_GS = 0, f = 1 MHz
V_DD = −5 V, I_D = −10 mA,
V_GS = 0~−4 V
1
Min Typ. Max Unit
⎯
⎯
−1
μA
−50 ⎯
⎯
V
⎯
⎯
−1
μA
−0.8
⎯
−2.5
V
15
⎯
⎯
mS
⎯
20
50
Ω
⎯ 10.5 ⎯
pF
⎯
1.9
⎯
pF
⎯
7.2
⎯
pF
⎯ 0.15 ⎯
μs
⎯ 0.13 ⎯
2007-11-01