2SJ312_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – DC−DC Converter, Relay Drive and Motor Drive Applications

2SJ312
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L²âˆ’π−MOSIV)
2SJ312
DC−DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance : R_{DS (ON)} = 80 mΩ (typ.)
z High forward transfer admittance : |Y_fs| = 8.0 S (typ.)
z Low leakage current : I_DSS = −100 μA (max) (V_DS = −60 V)
z Enhancement mode : V_th = −0.8 to −2.0 V (V_DS = −10 V, I_D = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
−60
V
−60
V
±20
V
−14
A
−56
40
W
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch−c)}
R_{th (ch−a)}
3.125
83.3
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1
2009-09-29