2SJ312_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – DC−DC Converter, Relay Drive and Motor Drive Applications

2SJ312
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L²âˆ’π−MOSIV)
2SJ312
DC−DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance : R_{DS (ON)} = 80 mΩ (typ.)
z High forward transfer admittance : |Y_fs| = 8.0 S (typ.)
z Low leakage current : I_DSS = −100 μA (max) (V_DS = −60 V)
z Enhancement mode : V_th = −0.8~−2.0 V (V_DS = −10 V, I_D = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
−60
V
−60
V
±20
V
−14
A
−56
40
W
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
R_{th (ch−c)}
R_{th (ch−a)}
3.125
83.3
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1
2006-11-16