2SJ305_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications Analog Applications

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ305
High Speed Switching Applications
Analog Applications
• High input impedance
• Low gate threshold voltage.: V_th = −0.5~−1.5 V
• Excellent switching times.: t_on = 0.06 μs (typ.)
t_off = 0.15 μs (typ.)
• Low drain-source ON resistance: R_{DS (ON)} = 2.4 Ω (typ.)
• Small package.
• Complementary to 2SK2009
2SJ305
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
V_GSS
I_D
P_D
T_ch
T_stg
−30
V
±20
V
−200
mA
200
mW
150
°C
−55~150
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device.
Please handle with caution.
Marking
Equivalent Circuit
1
2007-11-01