2SJ201_09 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Power Amplifier Application

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ201
High-Power Amplifier Application
z High breakdown voltage
z High forward transfer admittance
z Complementary to 2SK1530
: V_DSS = −200 V
: |Y_fs| = 5.0 S (typ.)
2SJ201
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Gate−source voltage
Drain current
(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
V_DSS
V_GSS
I_D
P_D
T_ch
T_stg
−200
V
±20
V
−12
A
150
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2009-12-10