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2SJ201-Y Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Power Amplifier Application | |||
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ201
High-Power Amplifier Application
z High breakdown voltage
z High forward transfer admittance
z Complementary to 2SK1530
: VDSS = â200 V
: |Yfs| = 5.0 S (typ.)
2SJ201
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainâsource voltage
Gateâsource voltage
Drain current
(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
PD
Tch
Tstg
â200
V
±20
V
â12
A
150
W
150
°C
â55 to 150
°C
JEDEC
â
JEITA
â
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (âHandling Precautionsâ/âDerating Concept and
Methodsâ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2009-12-10
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