2SJ200_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Power Amplifier Application

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ200
High Power Amplifier Application
z High breakdown voltage
z High forward transfer admittance
z Complementary to 2SK1529
: V_DSS = −180 V
: |Y_fs| = 4.0 S (typ.)
2SJ200
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Gate−source voltage
Drain current
(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
V_DSS
V_GSS
I_D
P_D
T_ch
T_stg
−180
V
±20
V
−10
A
120
W
150
°C
−55~150
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2006-11-16