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2SJ167_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon P Channel MOS Type | |||
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ167
High Speed Switching Applications
Analog Switch Applications
Interface Applications
2SJ167
Unit: mm
⢠Excellent switching time: ton = 14 ns (typ.)
⢠High forward transfer admittance: |Yfs| = 100 mS (min)
⢠Low on resistance: RDS (ON) = 1.3 ⦠(typ.)
⢠Enhancement-mode
⢠Complementary to 2SK1061
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
â60
V
Gate-source voltage
VGSS
±20
V
DC
ID
Drain current
Pulse
IDP
Drain power dissipation (Ta = 25°C)
PD
Channel temperature
Tch
Storage temperature range
Tstg
â200
mA
â800
300
mW
150
°C
â55~150
°C
JEDEC
JEITA
TOSHIBA
â
â
2-4E1E
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.13 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
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